Description
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
features
- Silicon Chip on Direct Copper Bond Substrates
- High Power Dissipation
- Isolated Mounting Surface
- 2500V Electrical insulation - Unclamped Inductive Switching (UIS) Rated
- Low package inductance
- - Easy to Drive and to Protect
- Fast Intrinsic Diode
Advantages- Easy to Mount
- space savings
- high power density
