Description
Power MOSFET
HiPerFET
N-Channel Enhancement Mode = 300ns
Avalanche Rated
Fast Intrinsic Diode
features
- International standard packages
- Fast recovery diode
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- - easy to drive and to protect
Advantages- Easy to mount
- Space savings
- high power density
Applications:- High Voltage Switched-mode and resonant-mode power supplies
- High Voltage Pulse Power Applications
- High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators
- High Voltage DC-DC converters
- High Voltage DC-AC inverters
