Description
Power MOSFET
ISOPLUS247TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
features
- International standard isolated package
- UL recognized package
- Silicon chip on Direct Copper Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation - Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect - Fast intrinsic diode
Advantages- Easy to mount
- Space savings
- high power density
