Description
HEXFET® Power MOSFET
features
- Advanced Process Technology
- ultra low on resistance
- 175°C Operating temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- lead free
description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient
and reliable device for use in a wide variety of applications.
