Description
HEXFET® Power MOSFET
- surface mount
- Advanced Process Technology
- ultra low on resistance
- Dynamic dv/dt Rating
- Fast Switching
- Fully Avalanche Rated
- lead free
description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety
of applications.
