Description
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
- Silicon Chip on Direct-Copper Bond (DCB) Substrates
- UL Recognized Package
- Isolated Mounting Surface
- 2500V Electrical insulation - Dynamic dv/dt Rating
- High Current Handling Capability
- Avalanche Rated
- Fast Intrinsic Diode
- The Rugged PolarPTM Process
- Low QG
- Low Drain-to-Tab Capacitance
- Low Package Inductance
Advantages- Easy to Mount
- space savings
- high power density
applications- high-side switches
- Push Pull Amplifiers
- DC choppers
- Automatic Test Equipment
- current regulators
