Description
HEXFET® Power MOSFET
features
- Advanced Process Technology
- ultra low on resistance
- 150°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- lead free
description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive
avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
