Description
• N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
• logic-level compatible
• very fast switching
• trench MOSFET technology
• electroStatic Discharge (ESD) protection: 2 kV HBM
Applications
• relay driver
• high-speed line driver
• low-side loadswitch
• switching circuits