Description
HEXFET® Power MOSFET
- surface mount
- Dynamic dv/dt Rating
- Fast Switching
- Ease of Paralleling
- Advanced Process Technology
- ultra low on resistance
- lead free
description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
