This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.
Features:
• Integrated half-bridge package
• reduces the part count by half
• facilitates better PCB layout
• Key parameters optimized for Class-D audio amplifier applications
• Low RDS(ON) for improved efficiency
• Low Qg and Qsw for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Can delivery up to 300W per channel into 8 load in half-bridge configuration amplifier
• Lead-free package
