CoolMOS™ 1) Power MOSFET
in ISOPLUS247TM package
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Package with Electrically Isolated Base
features
- ISOPLUS247™ package with DCB Base
- Electrical isolation towards the heatsink
- Low coupling capacitance to the heatsink for reduced EMI
- High power dissipation
- High temperature cycling capability of chip on DCB
- JEDEC TO-247AD compatible
- Easy clip assembly
- fast CoolMOS™ 1) power MOSFET 3rd generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive switching (UIS)
- Low thermal resistance due to reduced chip thickness
- Enhanced total power density
applications
- Switched mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
- Power factor correction (PFC)
- weld
- Inductive heating
1) CoolMOS™ is a trademark of
Infineon Technologies AG.
