"PolarP Power MOSFET(Electrically Isolated Tab)P-Channel Enhancement ModeAvalanche RatedfeaturesSilicon Chip on Direct-Copper Bond (DCB) SubstratesIsolated Mounting Surface2500V~ Electrical insulationAvalanche RatedExtended FBSOAFast Intrinsic DiodeLow RDS(ON) and QGAdvantagesEasy to Mountspace savingshigh power densityapplicationshigh-side switchingPush Pull AmplifiersDC choppersAutomatic Test Equipmentcurrent regulatorsBattery Charger Applications"