Product Description
IRLR2905ZPbF, IRLU2905ZPbF, HEXFET® Power MOSFETGeneral DescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features• Logic Level• Advanced Process Technology• Ultra Low On-Resistance• 175°C Operating Temperature• Fast Switching• Repetitive Avalanche Allowed up to Tjmax• Lead-Free
