"Power MOSFETISOPLUS247TM(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodefeaturesInternational standard isolated packageUL recognized packageSilicon chip on Direct Copper Bond substrate- High power dissipation- Isolated mounting surface- 2500V electrical isolationUnclamped Inductive Switching (UIS) ratedLow package inductance- easy to drive and to protectFast intrinsic diodeAdvantagesEasy to mountSpace savingshigh power density"