€1.19

  • €9.95
  • Delivery Time: 4-5 business days
  • Availability: In Stock
  • Product Condition: new

Description

HEXFET power MOSFET

This HEXFET Power MOSFET uses the latest processing techniques to achieve an extremely low on-state resistance on each silicon surface. Other features of this design include barrier layer operating temperature of 175°C, high switching speed and an improved repetitive avalanche rating. These characteristics make this design an extremely efficient and reliable component for a wide range of applications.

Features

  • Advanced process technology
  • Extremely low on-state resistance
  • Dynamic dv/dt value
  • 175°C operating temperature
  • Fast switching
  • Fully avalanche-rated
  • Lead-free