Description
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
features
- Silicon Chip on Direct-Copper Bond (DCB) Substrates
- Isolated Mounting Surface
- Low Intrinsic Gate Resistance
- 2500V~ Electrical insulation
- Dynamic dv/dt Rating
- Avalanche Rated
- Fast Intrinsic Rectifier
- Low QG
- Low RDS(on)
- Low Drain-to-Tab Capacitance
- Low Package Inductance
Advantages- high power density
- Easy to Mount
- space savings
