Third Generation HEXFET® from International Rectifier provide the designer with the best combination of fast switching ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 con tribute to its wide acceptance throughout the industry.
Features
• logic-Level Gate Drive
• surface Mount (IRLR024N)
• straight Lead (IRLU024N)
• advanced Process Technology
• fast Switching
• Rds(on) specified at Vgs=4V & %V
