IKW25T120
1200V Low Loss DuoPack IGBT and Diode : IGBT in TrenchStop® and Fieldstop technology with soft and fast recovery anti-parallel Emitter Controlled HE diode
Features and Benefits:
• Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP313D
• Short circuit withstand time – 10µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• TrenchStop® and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel Emitter Controlled HE diode
• qualified according to JEDEC for target applications
• Pb-free lead plating, halogen-free mould compound, RoHS compliant
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
