Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
• 1.8 V drain-source on-state resistance rated
• very fast switching
• trench MOSFET technology
Applications
• relay driver
• high-speed line driver
• high-side loadswitch
• switching circuits
