"Power MOSFETHiPerFETN-Channel Enhancement Mode = 300nsAvalanche RatedFast Intrinsic DiodefeaturesInternational standard packagesFast recovery diodeUnclamped Inductive Switching (UIS) ratedLow package inductance- easy to drive and to protectAdvantagesEasy to mountSpace savingshigh power densityApplications:High Voltage Switched-mode and resonant-mode power suppliesHigh Voltage Pulse Power ApplicationsHigh Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF GeneratorsHigh Voltage DC-DC convertersHigh Voltage DC-AC inverters"