DG75X07T2L, 650 V IGBT with Diode
General Description
DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS.
Features
• Low V CE(sat) Fast IGBT technology
• 6µs short circuit capability
• Low switching loss
• Maximum junction temperature 175 °C
• Low inductance case
• V CE(sat) with positive temperature coefficient
• Fast & soft reverse recovery anti parallel FWD
• Lead free package
Typical Applications
• Inverter for motor drive
• AC and DC servo drive amplifier
• Uninterruptible power supply
