"Power MOSFETN-Channel Enhancement ModeFast Intrinsic DiodefeaturesSilicon Chip on Direct-Copper Bond (DCB) SubstratesIsolated Mounting SurfaceLow Intrinsic Gate Resistance2500V~ Electrical insulationDynamic dv/dt RatingAvalanche RatedFast Intrinsic RectifierLow QGLow RDS(on)Low Drain-to-Tab CapacitanceLow Package InductanceAdvantageshigh power densityEasy to Mountspace savings"