DescriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits• 1.8 V drain-source on-state resistance rated• very fast switching• trench MOSFET technologyApplications• relay driver• high-speed line driver• high-side loadswitch• switching circuits