Fifth generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremly low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremly efficient and reliable device for une in a wird variety of applications.
The TO-220 Fullpark eliminates the need for additional insulating hardware in commercial.industrial applications. The moulding compound used resistance betwenn the tab a 100 micron mica barrier with standard TO-220 product. The Fullpark is mounted to a heatsink using a single clip or by a single screw fixing.
• advanced Process technology
• isolated package
• high Voltage isolation = 2.5KVRMS
• sink to lead creepage Dist.= 4.8mm
• fully Avalanche Rated
• Lead-Free
