The LND150 is a high-voltage N-channel depletion mode (normally-on) transistor utilising lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high-voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
• Free from secondary breakdown
• Low power drive requirement
• Ease of paralleling
• Excellent thermal stability
• Integral source-drain diode
• High input impedance and low CISS
• ESD gate protection
Technical data:
• BVdsx: 500 V
• RDS: 1000 ohm
• Ugs (off): -1.0 - -3.0 V
• RDS: 1 kOhm
• Ic: 1 mA
