Product Description
N-Channel, Depletion-Mode, Vertical DMOS FET
Description
The DN2530 is a low-threshold, depletion-mode, normally- on transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high-input impedance, low-input capacitance, and fast switching speeds are desired.
Features
• High-input impedance
• Low-input capacitance
• Fast switching speeds
• Low on-resistance
• Free from secondary breakdown
• Low input and output leakage
Applications
• Normally-on switches
• Solid state relays
• Converters
• Linear amplifiers
• Constant current sources
• Power supply circuits
• Telecom
