"Power MOSFETP-Channel Enhancement ModeAvalanche RatedfeaturesSilicon Chip on Direct-Copper Bond (DCB) Substrates- UL Recognized Package- Isolated Mounting Surface- 2500V Electrical insulationDynamic dv/dt RatingHigh Current Handling CapabilityAvalanche RatedFast Intrinsic DiodeThe Rugged PolarPTM ProcessLow QGLow Drain-to-Tab CapacitanceLow Package InductanceAdvantagesEasy to Mountspace savingshigh power densityapplicationshigh-side switchesPush Pull AmplifiersDC choppersAutomatic Test Equipmentcurrent regulators"