Product Description
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAsDescriptionsTSAL6100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package.
Features• Package type: leaded• Package form: T-1¾• Dimensions (in mm): Ø 5• Peak wavelength: ?p = 940 nm• High reliability• High radiant power• High radiant intensity• Angle of half intensity: ? = ± 10°• Low forward voltage• Suitable for high pulse current operation• Good spectral matching with Si photodetectorsApplications• Infrared remote control units with high power reqirements• Free air transmission systems• Infrared source for optical counters and card readers• IR source for smoke detectors
