Description
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
Descriptions
TSAL6100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package.
Features
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: ?p = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ? = ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
Applications
• Infrared remote control units with high power reqirements
• Free air transmission systems
• Infrared source for optical counters and card readers
• IR source for smoke detectors
