MSC035SMA170S, 1700 V, 35 mOhm, Silicon Carbide N-Channel Power MOSFET
Description
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC035SMA170S device is a 1700 V, 35 mO SiC MOSFET in a TO-268 (D3PAK) package.
Features:
• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, TJ(max) = 175 °C
• Fast and reliable body diode
• Superior avalanche ruggedness
• RoHS compliant
Benefits:
• High efficiency to enable lighter, more compact system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need for external freewheeling diode
• Lower system cost of ownership
Applications:
• PV inverter, converter, and industrial motor drives
• Smart grid transmission and distribution
• Induction heating and welding
• H/EV powertrain and EV charger
• Power supply and distribution
