Description
HEXFET Power MOSFET
features
- Key parameters optimized for Class-D audio amplifier applications
- Low RDSON for improved efficiency
- Low QG and QSW for better THD and improved efficiency
- Low QRR for better THD and lower EMI
- 175°C operating junction temperature for ruggedness
- Can deliver up to 300W per channel into 8R load in half-bridge configuration amplifier