Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
• advanced Process Technology
• ultra Low On-Resistance
• 175°C Operating Temperature
• fast Switching
• repetitive Avalanche Allowed up to Tjmax
