Product Description
The LND150 is a high-voltage N-channel depletion mode (normally-on) transistor utilising lateral DMOS technology.
The gate is ESD protected.
The LND150 is ideal for high-voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
• Free from secondary breakdown• Low power drive requirement• Ease of paralleling• Excellent thermal stability• Integral source-drain diode• High input impedance and low CISS• ESD gate protection Technical data:• BVdsx: 500 V• RDS: 1000 ohm• Ugs (off): -1.0 - -3.0 V• RDS: 1 kOhm• Ic: 1 mA
