Description
High-Speed CMOS Static RAM 3,3V 64kx16 10ns TSOP44(II)
Description:
The ISSI IS61WV6416DAxx/DBxx are high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits. It is fabricated using ISSI's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61WV6416DAxx/DBxx are packaged in the JEDEC standard 44-pin TSOP Type II, 44-pin 400-mil SOJ and 48-pin Mini BGA (6mm x 8mm).
Features:
• High-speed access time: 10 ns
• Low Active Power: 135 mW (typical)
• Low Standby Power: 12 µW (typical) CMOS standby
• Single power supply Vdd 2.4V to 3.6V
• Fully static operation: no clock or refresh required
• Three state outputs
• Industrial and Automotive temperature support
• Lead-free available
• Data control for upper and lower bytes
