International Rectifier's third generation HEXFETs use advanced processing techniques to achieve extremely low on-resistance per silicon area. This advantage, combined with the fast switching speed and robust device design for which HEXFET power MOSFETs are renowned, provides designers with an extremely efficient and reliable device for use in a wide range of applications. The TO-220 package is generally preferred for all commercial/industrial applications with power dissipation up to approximately 50 watts.The low thermal resistance and low cost of the TO-220 package contribute to its wide acceptance in the industry.
Features
• adavanced Process Technology
• ultra Low On-Resistance
• dual N-Channel MOSFET
• surface Mount
• available in Tape & Reel
• dynamic dv/dt Rating
• fast Switching
