This HEXFET® power MOSFET was developed specifically for automotive applications. Power MOSFET uses the latest processing techniques to achieve
achieve extremely low on-resistance per silicon area. An additional 175°C junction operating temperature, high switching speed and improved repetitive avalanche rating. These features make this design an extremely efficient and reliable component for use in automotive and
a variety of other applications.
• Logical level
• advanced process technology
• ultra-low on-resistance
• 175°C operating temperature
• fast switching
• repeated avalanche up to Tjmax allowed
