Third Generation HEXFET® from International Rectifier provide the designer with the best combination of fast switching ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 con tribute to its wide acceptance throughout the industry.
Features
• dynamic dv/dt rating
• advanced Process Technology
• logic-level gate drive
• RDS (on) specified at Vgs= 4V & 5V
• fast Switching
• ease of paralleling
• simple drive requirements
