"HEXFET power MOSFETThis HEXFET Power MOSFET uses the latest processing techniques to achieve an extremely low on-state resistance on each silicon surface.
Other features of this design include barrier layer operating temperature of 175°C, high switching speed and an improved repetitive avalanche rating.
These characteristics make this design an extremely efficient and reliable component for a wide range of applications.
FeaturesAdvanced process technologyExtremely low on-state resistanceDynamic dv/dt value175°C operating temperatureFast switchingFully avalanche-ratedLead-free"